Record number :
99888
Title of article :
A high-density MIM capacitor (13 fF/(mu)m/sup 2/) using ALD HfO/sub 2/ dielectrics
Author/Authors :
Cho، byung Jin نويسنده , , A.، Chin, نويسنده , , Zhu، Chunxiang نويسنده , , M.F.، Li, نويسنده , , Kwong، Dim-Lee نويسنده , , Hu، Hang نويسنده , , Yu، Xiongfei نويسنده , , P.D.، Foo, نويسنده , , Yu، Ming Bin نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
-62
From page :
63
To page :
0
Abstract :
Metal-insulator-metal (MIM) capacitors with different HfO/sub 2/ thickness have been investigated. The results show that both the capacitance density and voltage coefficients of capacitance (VCCs) increase with decreasing HfO/sub 2/ thickness. In addition, it is found that the VCCs decrease logarithmically with increasing thickness. Furthermore, the MIM capacitor with 10-nm HfO/sub 2/ shows a record high capacitance density of 13 fF/(mu)m/sup 2/ and a VCC of 607 ppm/V, which can meet the requirement of the International Technology Roadmap for Semiconductors. It can also provide a low leakage current of 5.95 * 10/sup -8/A/cm/sup 2/ at room temperature at 1 V, low tangent values below 0.05, and a small frequency dependence. These results indicate that the devices are suitable for use in silicon integrated circuit applications.
Keywords :
heat transfer , natural convection , Analytical and numerical techniques
Journal title :
IEEE Electron Device Letters
Journal title :
IEEE Electron Device Letters
Serial Year :
2003
Link To Document :
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