Cho، byung Jin نويسنده , , A.، Chin, نويسنده , , Zhu، Chunxiang نويسنده , , M.F.، Li, نويسنده , , Kwong، Dim-Lee نويسنده , , Hu، Hang نويسنده , , Yu، Xiongfei نويسنده , , P.D.، Foo, نويسنده , , Yu، Ming Bin نويسنده ,
Metal-insulator-metal (MIM) capacitors with different HfO/sub 2/ thickness have been investigated. The results show that both the capacitance density and voltage coefficients of capacitance (VCCs) increase with decreasing HfO/sub 2/ thickness. In addition, it is found that the VCCs decrease logarithmically with increasing thickness. Furthermore, the MIM capacitor with 10-nm HfO/sub 2/ shows a record high capacitance density of 13 fF/(mu)m/sup 2/ and a VCC of 607 ppm/V, which can meet the requirement of the International Technology Roadmap for Semiconductors. It can also provide a low leakage current of 5.95 * 10/sup -8/A/cm/sup 2/ at room temperature at 1 V, low tangent values below 0.05, and a small frequency dependence. These results indicate that the devices are suitable for use in silicon integrated circuit applications.