Record number :
99884
Title of article :
Improvement of short-channel characteristics of a 0.1-(mu)m PMOSFET with ultralow-temperature nitride spacer by using a novel oxide capped boron uphill treatment
Author/Authors :
C.L.، Chen, نويسنده , , C.H.، CHEN نويسنده , , Y.K.، Fang, نويسنده , , S.F.، Ting, نويسنده , , C.W.، Yang, نويسنده , , W.D.، Wang, نويسنده , , S.F.، Chen, نويسنده , , J.Y.، Cheng, نويسنده , , M.F.، Wang, نويسنده , , L.G.، Yao, نويسنده , , T.L.، Lee, نويسنده , , S.C.، Chen, نويسنده , , C.H.، Yu, نويسنده , , M.S.، Liang, نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
-42
From page :
43
To page :
0
Abstract :
In this work, the thermal annealing at 720(degree)C for 2 hr (called boron uphill treatment) with an SiO/sub 2/-capped layer was applied after source/drain extensions (SDE) implantation to improve the short channel characteristics of a 0.1-(mu)m PMOSFET with an ultra-low temperature nitride spacer. The influence and the mechanism of the capped layer on this uphill treatment were investigated. The results show that the capped layer treatment indeed leads to a shallower junction, improved V/sub th/ roll-off characteristic, and added immunity against subsurface punchthrough.
Keywords :
Analytical and numerical techniques , natural convection , heat transfer
Journal title :
IEEE Electron Device Letters
Serial Year :
2003
Link To Document :
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