Record number :
998301
Title of article :
Deposition of MgO films by pulsed mid-frequency magnetron sputtering
Author/Authors :
Y.H. Cheng، نويسنده , , H Kupfer، نويسنده , , F Richter، نويسنده , , Andreea Maria Paraian، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
8
From page :
117
To page :
124
Abstract :
MgO films were deposited by pulsed mid-frequency magnetron sputtering from metallic targets in the mixture of Ar and O2 gas. The surface morphology, crystalline structure, and optical properties were characterized by using atomic force microscopy (AFM), X-ray diffraction (XRD), and spectroscopic ellipsometry, respectively. The secondary electron emission coefficients of MgO films were measured by using a self-made apparatus in He gas. A pronounced hysteresis phenomenon of target voltage, current, and deposition rate with increasing and decreasing O2 flow rate was observed. The structure of films deposited at a metallic mode changes from Mg phase to the mixed Mg and MgO phase, and the films have a very rough surface. All the films deposited at oxide mode have high transparency and smooth surface, and show (2 2 0) preferred orientation growth. The refractive index and extinction coefficient at a wavelength of 670 nm for MgO films deposited at oxide mode with a O2 flow rate of 3 sccm are 1.698 and 1.16×10−4, respectively. The secondary emission coefficient at a E/p of 57.8 V/(cm Torr) for MgO films deposited at a O2 flow rate of 3 sccm is 0.16, which is higher than that of MgO films deposited by e-beam evaporation.
Keywords :
Secondary electron emission coefficient , MgO films , Pulsed mid-frequency magnetron sputtering
Journal title :
Applied Surface Science
Serial Year :
2002
Link To Document :
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