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Title of article :
Structural and optical characterization of InAs nanostructures grown on 001/ and high index InP substrates
Author/Authors :
Y.F. Li)، نويسنده , , X.L. Ye، نويسنده , , F.Q. Liu، نويسنده , , B. Xu، نويسنده , , D. Ding، نويسنده , , W.H. Jiang، نويسنده , , Z.Z. Sun، نويسنده , , H.Y. Liu، نويسنده , , Y.C. Zhang، نويسنده , , Z.G. WANG، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
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Abstract :
The effects of InP substrate orientations on self-assembled InAs quantum dots QDs. have been investigated by molecular beam epitaxy MBE.. A comparison between atomic force microscopy AFM.and photoluminescence PL. spectra shows that a high density of smaller InAs islands can be obtained by using such high index substrates. On the other hand, by introducing a lattice-matched underlying In0.52Al0.24Ga0.24As layer, the InAs QDs can be much more uniform in size and have a great improvement in PL properties. More importantly, 1.55-mm luminescence at room temperature RT. can be realized in InAs QDs deposited on 001.InP substrate with underlying In0.52 Al0.24Ga0.24As layer. q2000 Elsevier Science B.V. All rights reserved
Keywords :
Self-assembled quantum dots , Molecular beam epitaxy , High index
Journal title :
Applied Surface Science
Serial Year :
Link To Document :