Record number :
995808
Title of article :
Effects of thermal annealing on the strains and structures of CdTe epilayers grown on Si 100/substrates for various substrate tilt angles
Author/Authors :
Y.B. Hou، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
5
From page :
213
To page :
217
Abstract :
Photoluminescence PL.measurements on epitaxial films grown on Si substrates by using molecular beam epitaxy were carried out at various substrate tilt angles to investigate the effect of annealing on the optical and the structural properties of CdTe epilayers. The strains for the as-grown and the annealed CdTe epitaxial layers on Si substrates as functions of the substrate tilt angle were obtained from the acceptor bound-exciton peak of the PL spectra. Possible primitive unit cells of the as-grown and the annealed CdTe epilayers are presented. q1999 Elsevier Science B.V. All rights reserved.
Keywords :
Thermal annealing , Primitive unit cells , Si 100.substrates , CdTe epilayers
Journal title :
Applied Surface Science
Serial Year :
1999
Link To Document :
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