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Title of article :
Effects of step bunching on CuPt-B ordered structures in Ga In P grown by MOVPE
Author/Authors :
A. Gomyo )، نويسنده , , F. Miyasaka، نويسنده , , H. Hotta، نويسنده , , K. Fukagai، نويسنده , , K. Kobayashi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1998
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Abstract :
The effects of step bunching on a CuPt-B ordered structure in Ga0.5In0.5P grown on 118.B and 1 1 13.B substrates by metalorganic vapor phase epitaxy MOVPE.were studied. The growth was carried out at 6608C with VrIII ratios of 55 and 1500. In the GaInP layers, a CuPt-B ordered structure in thew111xB direction was dominantly formed. The epitaxial growth surfaces were undulated caused by the atomic-step bunching. When GaInP was grown at a VrIII ratio of 55, a disordered region of CuPt-B ordered structure was formed at the step-bunched surface. At a VrIII ratio of 1500, anti-phase domain boundaries of a CuPt-B ordered structure were formed on terraced surfaces, resulting in stretched terrace surfaces. The ordered structure is expected to be caused by the epitaxial growth on the undulated surface which has a distribution of P-dimer coverage. From a transmission electron microscopy lattice image, CuPt-B ordered-structure formation at the lower VrIII ratio was weaker. The difference in the ordered-structure formation between two VrIII ratios indicates that P-dimer coverage of surface reconstructions is a factor that affects the ordering formation intensity. q1998 Elsevier Science B.V. All rights reserved.
Keywords :
GaInP , CuPt-type , Step bunching , MOVPE , Ordered structure
Journal title :
Applied Surface Science
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