Record number :
992226
Title of article :
Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix
Author/Authors :
Y.H. Chen، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1998
Pages :
4
From page :
343
To page :
346
Abstract :
The steplike density of states obtained from reflectance-difference spectroscopy demonstrates that ultrathin InAs layers should be regarded as two-dimensional quantum wells rather than isolated clusters, even for the sample with only 1/3 monolayer InAs in (311)-oriented GaAs. The degree of anisotropy is within the intrinsic anisotropy of (311)-oriented ultrathin quantum wells, indicating that there is little structural or strain anisotropy in the InAs islands.
Journal title :
Applied Surface Science
Serial Year :
1998
Link To Document :
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