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Title of article :
Ultrasonic evaluation of the silicon/copper interfaces in IC packaging
Author/Authors :
Y.، Wang نويسنده , , K.C.، Chan, نويسنده , , J.، Abdul, نويسنده , , N.، Guo, نويسنده , , A.U.، Rehman, نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
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Abstract :
The silicon die and copper lead-frame in integrated circuit (IC) packaging are bonded using a die attach adhesive, and the quality of the adhesive interface is a critical issue in the reliability testing of IC packaging and during the manufacturing process. Common defects such as cracks and delamination can be detected using the C-mode ultrasonic microscopic method with sufficient confidence. However, a weak interface due to weak adhesion and poor cohesion has often gone undetected and may become a potential defect at a later stage. There is a desire to study the interface quality quantitatively, so that any potentially defective area can be evaluated and identified early. This paper describes work in evaluating the quality of the interfaces that typically exist in IC packages by using longitudinal ultrasonic wave propagation with contact transducers. An interface spring model is used to predict the ultrasonic reflection coefficient relationship with varying interfacial spring constants. Experimental results of normal incidence reflection coefficients are obtained from the two-layered specimen bonded with die attach adhesive under varying conditioning process that simulates the degrading of the interface. Good qualitative agreement between the measurement and the prediction is obtained, and shows that the reflection coefficient depends strongly on the interface quality. The study demonstrates that the quantification of the interface quality is possible, using the reflection coefficient as a criterion.
Keywords :
developable surface , electromagnetic scattering , Physical optics , radar backscatter
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