Record number :
95915
Title of article :
SiC thin-film Fabry-Perot interferometer for fiber-optic temperature sensor
Author/Authors :
Cheng، Lin نويسنده , , A.J.، Steckl, نويسنده , , J.، Scofield, نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
-2158
From page :
2159
To page :
0
Abstract :
Polycrystalline SiC grown on single-crystal sapphire substrates have been investigated as thin-film FabryPerot interferometers for fiber-optic temperature measurements in harsh temperatures. SiC-based temperature sensors are compact in size, robust, and stable at high temperatures, making them one of the best choices for high temperature applications. SiC films with thickness of about 0.5-2.0 (mu)m were grown at 1100(degree)C by chemical vapor deposition (CVD) with trimethylsilane. The effect of operating temperature on the shifts in resonance minima, (delta)(lambda)/sub m/, of the SiC/sapphire substrate has been measured in the visible-infrared wavelength range. A temperature sensitivity of 1.9*10/sup – 5//(degree)C is calculated using the minimum at ~700 nm. Using a white, broadband light source, a temperature accuracy of +3.5(degree)C is obtained over the temperature range of 22(degree)C to 540(degree)C.
Keywords :
channel hot electron (CHE) , channel initiated secondary electron (CHISEL) , Flash electrically erasable programmable read-only memories (EEPROMs) , Monte Carlo simulation , programming efficiency , hot carriers , device scaling
Journal title :
IEEE TRANSACTIONS ON ELECTRON DEVICES
Journal title :
IEEE TRANSACTIONS ON ELECTRON DEVICES
Serial Year :
2003
Link To Document :
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