Record number :
95777
Title of article :
A compact analytical model for asymmetric single-electron tunneling transistors
Author/Authors :
Y.، Takahashi, نويسنده , , H.، Inokawa, نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
-454
From page :
455
To page :
0
Abstract :
Analytical model for asymmetric single-electron tunneling transistors (SETTs), in which resistance and capacitance parameters of source/drain junctions are not equal, has been developed. The model is based on the steady-state master equation, takes only the two most-probable charging states into account, and is therefore very simple. Even so, it can accurately reproduce the peculiar behaviors of an asymmetric SETT, such as the skew in the drain current-gate voltage characteristics and the Coulomb staircase in the drain current-drain voltage characteristic. Analytical expressions for the charge in the Coulomb island and the capacitance components of the SETT are also derived according to the same scheme, and it is demonstrated that the model can precisely describe the various aspects of the SETT behavior.
Keywords :
Industrial organization , Biotechnology R&D
Journal title :
IEEE TRANSACTIONS ON ELECTRON DEVICES
Serial Year :
2003
Link To Document :
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