Record number :
95669
Title of article :
Fast reverse recovery body diode in high-voltage VDMOSFET using cell-distributed Schottky contacts
Author/Authors :
Cheng، Xu نويسنده , , J.K.O.، Sin, نويسنده , , Kang، Baowei نويسنده , , Feng، Chuguang نويسنده , , Wu، Yu نويسنده , , Liu، Xingming نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
-1421
From page :
1422
To page :
0
Abstract :
A new approach to improve the high-voltage vertical double-diffused MOSFET (VDMOSFET) body-diode recovery speed is proposed. In this approach, a Schottky contact is integrated into every cell of the VDMOSFET. Experimental results from the fabricated samples show a 50% decrease in the reverse recovery charge and a 60% increase in the softness factor of the body diode in 500 V/2 A VDMOSFETs.
Keywords :
Navier-Stokes , Multigrid , Newton , Non-linear , Krylov
Journal title :
IEEE TRANSACTIONS ON ELECTRON DEVICES
Journal title :
IEEE TRANSACTIONS ON ELECTRON DEVICES
Serial Year :
2003
Link To Document :
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