Record number :
31843
Title of article :
Effect of Nd3+ concentration on the laser performance of a new laser crystal: Nd : NaY(WO4)2
Author/Authors :
Cheng، Zhenxiang نويسنده , , Shao، Zongshu نويسنده , , Liu، Junhai نويسنده , , Chen، Huanchu نويسنده , , Fu، Kun نويسنده , , Wang، Zheng-Ping نويسنده , , Song، Ren-Bo نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
-592
From page :
593
To page :
0
Abstract :
A p–n junctions formed by means of laser stimulated diffusion of dopants into semiconductors (Si, GaAs, GaP, InP) were investigated. SIMS and AES spectroscopy methods were used to measure the depth profiles of the incorporated impurities: B into Si, Zn into GaAs, GaP and InP. The volt-capacity method using an electrochemical profilometer was used for the charge carrier concentration distribution in the doped layer. Spectroscopy investigations have shown that during solid phase diffusion locally doped regions almost exactly reproduce the shape and size of the windows in the dielectrics. The lateral diffusion of the dopant is about 0.01mum. The concentration profiles of charge carrier distribution in the doped layers clearly show the specific processes of dopant diffusion and evaporation at laser solid-phase doping of semiconductors. The comparative analysis of parameters of formed semiconductor structures shows that the procedure of laser solid-phase doping can stand the comparison with technology of implantation and conventional diffusion technology. Since the laser solid-phase doping ensures also a high degree of reproducibility of p–n junction parameters, it can be effectively used for electronic devices fabrication.
Keywords :
Nd:NaY(WO4)2 crystal , Absorption and emission property , Nd3+ concentration
Journal title :
OPTICS & LASER TECHNOLOGY
Journal title :
OPTICS & LASER TECHNOLOGY
Serial Year :
2001
Link To Document :
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