Ardelean، نويسنده , , J and Hrisoho، نويسنده , , A and Truong، نويسنده , , K and Manfredi، نويسنده , , P.F and Speziali، نويسنده , , V and Svelto، نويسنده , , F and Citterio، نويسنده , , M، نويسنده ,
This paper discusses the results obtained with charge sensitive preamplifiers employing a large input device and suitable for room temperature as well as cryogenic calorimetry applications. The preamplifiers have been realised in DMILL technology, a process where all devices are on an insulating layer.
eamplifier configurations are illustrated here. One of them is entirely based on P-channel JFETs, the other one employs PJFETs and NMOS. In both cases the input device is a PJFET with 1.2 μm gate length, a device which was proven to feature outstanding noise performances.