Archanjo، نويسنده , , B.S. and Maciel، نويسنده , , I.O. and Martins Ferreira، نويسنده , , E.H. and Peripolli، نويسنده , , S.B. and Damasceno، نويسنده , , J.C. and Achete، نويسنده , , C.A. and Jorio، نويسنده , , A.، نويسنده ,
This work reports Ga+ focused ion beam nanopatterning to create amorphous defects with periodic square arrays in highly oriented pyrolytic graphite and the use of Raman spectroscopy as a new protocol to test and compare progresses in ion beam optics, for low fluence bombardment or fast writing speed. This can be ultimately used as a metrological tool for comparing different FIB machines and can contribute to Focused Ion Beam (FIB) development in general for tailoring nanostructures with higher precision. In order to do that, the amount of ion at each spot was varied from about 106 down to roughly 1 ion per dot. These defects were also analyzed by using high resolution scanning electron microscopy and atomic force microscopy. The sensitivities of these techniques were compared and a geometrical model is proposed for micro-Raman spectroscopy in which the intensity of the defect induced D band, for a fixed ion dose, is associated with the diameter of the ion beam. In addition, the lateral increase in the bombarded spot due to the cascade effect of the ions on graphite surface was extracted from this model. A semi-quantitative analysis of the distribution of ions at low doses per dot or high writing speed for soft modification of materials is discussed.
Focused ion beam , HOPG , Raman spectroscopy , Metrology