Record number :
2150343
Title of article :
Tunable Schottky diodes fabricated from crossed electrospun SnO2/PEDOT-PSSA nanoribbons
Author/Authors :
Carrasquillo، نويسنده , , Katherine V. and Pinto، نويسنده , , Nicholas J.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Pages :
5
From page :
805
To page :
809
Abstract :
Schottky diodes have been fabricated on doped Si/SiO2 substrates in air, by simply crossing individual electrospun tin oxide (SnO2) and poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate) (PEDOT-PSSA) nanoribbons. The conductivity of PEDOT-PSSA was ∼6 S/cm with no observable field effect, while SnO2 exhibited n-doped field effect behavior with a charge mobility of ∼3.1 cm2/V-s. The diodes operate in air or in vacuum, under ambient illumination or in the dark, with low turn-on voltages and device parameters that are tunable via a back gate bias or a UV light source. Their unique design involves a highly localized active region that is completely exposed to the surrounding environment, making them potentially attractive for use as sensors. The standard thermionic emission model of a Schottky junction was applied to analyze the forward bias diode characteristics and was successfully tested as a half wave rectifier.
Keywords :
diode , PEDOT-PSSA , Tin oxide , nanoribbons
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2012
Link To Document :
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