Record number :
2140705
Title of article :
Optical and dielectric properties of (Zr0.8,Sn0.2)TiO4 thin films prepared by sol–gel process
Author/Authors :
Cheng، نويسنده , , W.X and Ding، نويسنده , , A.L and Qiu، نويسنده , , P.S and He، نويسنده , , X.Y. and Zheng، نويسنده , , X.Sh، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
4
From page :
382
To page :
385
Abstract :
(Zr0.8,Sn0.2)TiO4 (ZST) thin films (∼314 nm) were grown on Pt/Ti/SiO2/Si(1 0 0) and fused quartz glass substrates by sol–gel process. Microstructure and surface morphology of the ZST thin films have been studied by X-ray diffraction and atomic force microscopy. Optical properties of the ZST thin films were obtained by spectroscopic ellipsometry and UV–VIS spectrometry for the first time. An optical bandgap was found to be 3.57 eV of indirect-transition type. Low frequency (1 kHz–1 MHz) dielectric properties of the ZST thin films were also discussed. A temperature coefficient of capacitance of the ZST thin films is about 120.2 ppm °C−1 at 1 MHz. The dielectric constant and dissipation factor at 100 kHz are 26.6 and 0.01, respectively. The large dielectric loss compared with that of ZST ceramics is caused by the structure disorder in the thin film.
Keywords :
Sn0.8)TiO4 thin film , (Zr0.2 , Optical properties , dielectric properties , Sol–gel
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2003
Link To Document :
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