Record number :
Title of article :
Optical investigations of the above barrier state transitions in GaAs/Al0.3Ga0.7As double quantum wells
Author/Authors :
Utko، نويسنده , , M and S?k، نويسنده , , G and Ryczko، نويسنده , , K and Bryja، نويسنده , , L and Misiewicz، نويسنده , , J and Bayer، نويسنده , , M and Koeth، نويسنده , , J and Forchel، نويسنده , , A، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
From page :
To page :
Abstract :
GaAs/AlxGa1−xAs coupled double quantum wells (CDQW) separated by thin AlAs barrier have been investigated by photoluminescence excitation (PLE) and photoreflectance (PR) spectroscopies in magnetic fields up to 6 T. We have focused on excitonic transitions between confined hole states and electron resonant states above AlxGa1−xAs barrier. The spatial extents of excitons involving resonant state electrons have been estimated from diamagnetic shifts of observed transitions. Determined values have been compared with the respective values of fundamental confined state excitons.
Keywords :
Spatial size of exciton , Double quantum wells , Diamagnetic shift
Journal title :
Materials Science and Engineering C
Serial Year :
Link To Document :