Record number :
2094498
Title of article :
Phase transformation and morphological evolution of ion-beam sputtered tin oxide films on silicon substrate
Author/Authors :
Choe، نويسنده , , Yong-Sahm and Chung، نويسنده , , Jae-Ho and Kim، نويسنده , , Daeseung and Kim، نويسنده , , Gyeung-Ho and Baik، نويسنده , , Hong Koo، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
7
From page :
1473
To page :
1479
Abstract :
Amorphous tin oxide films were deposited on a silicon substrate by ion-beam sputtering (IBS) using a SnO2 target. Phase transformation and morphological changes of deposited films at different annealing temperatures were studied by X-ray diffraction and scanning electron microscopy. Crystallization of the as-deposited film started at 350°C and SnO and SnO2 phases formed at 400°C. Disproportionation of SnO into Sn and SnO2 was observed at 450°C followed by the oxidation of metallic tin at 550°C. Large volume changes accompanying the oxidation of metallic tin at this temperature caused the partial detachment and formation of heavy wrinkles on the film. These results suggest that the oxygen deficiency of tin oxide films should be avoided by optimizing the deposition process, since a drastic morphological change at the phase transformation to SnO2 during annealing may destroy the integrity of the thin films and degrade the long-term stability of tin oxide films used as gas sensors at high temperatures.
Keywords :
D. Phase transitions , A. Oxides , A. Thin films , C. X-ray diffraction
Journal title :
Materials Research Bulletin
Journal title :
Materials Research Bulletin
Serial Year :
1999
Link To Document :
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