Record number :
2087709
Title of article :
Mid-infrared lasers fabricated from III–V compound semiconductors
Author/Authors :
Choi، نويسنده , , Hong K، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Pages :
6
From page :
212
To page :
217
Abstract :
Considerable progress has been made in research on mid-infrared semiconductor lasers in terms of their maximum operating temperature and output power. Antimonide-based quantum-well lasers have exhibited continuous wave operation at 2.0 μm up to 400 K, at 2.7 μm to 234 K, at 3.5 μm to 175 K, and at 3.9 μm to 128 K. Diode lasers utilizing type-II transitions have exhibited lasing between 3 μm and 4 μm. Optically pumped lasers emitting at 4 μm have yielded peak power of 2.7 W and average power of 470 mW at 55K. Quantum cascade lasers have operated continuous wave at 4.6 μm up to 85 K, and at 7.8 μm to 110 K.
Journal title :
Current Opinion in Solid State and Materials Science
Journal title :
Current Opinion in Solid State and Materials Science
Serial Year :
1996
Link To Document :
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