Record number :
2085336
Title of article :
Organic–inorganic hybrid gate dielectrics for low-voltage pentacene organic thin film transistors
Author/Authors :
Choi، نويسنده , , Chaun Gi and Bae، نويسنده , , Byeong-Soo، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2009
Pages :
4
From page :
1288
To page :
1291
Abstract :
Organic thin film transistors (OTFTs) for low-voltage operation have been realized with very thin organic–inorganic hybrid gate dielectrics. Organic–inorganic hybrid thin films have good electrical properties, including high dielectric strength and low leakage current density down to 40 nm thickness. In addition, organic–inorganic hybrid thin films have smooth and hydrophobic surface. OTFTs with 40-nm-thick organic–inorganic hybrid dielectrics are operating within −5 V and exhibit a mobility of 0.3 cm2/(V s), a threshold voltage of −2.6 V, and a small subthreshold swing of 0.43 V/decade. In addition, OTFTs with 40-nm-thick organic–inorganic hybrid dielectrics have low hysteresis.
Keywords :
Organic thin film transistors (OTFTs) , Low-voltage operation , Gate dielectrics , Organic–inorganic hybrid materials
Journal title :
Synthetic Metals
Journal title :
Synthetic Metals
Serial Year :
2009
Link To Document :
بازگشت