Record number :
Title of article :
Enhanced lateral heat dissipation packaging structure for GaN HEMTs on Si substrate
Author/Authors :
Cheng، نويسنده , , Stone and Chou، نويسنده , , Po-Chien and Chieng، نويسنده , , Wei-Hua and Chang، نويسنده , , E.Y.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Pages :
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Abstract :
This work presents a technology for packaging AlGaN/GaN high electron mobility transistors (HEMTs) on a Si substrate. The GaN HEMTs are attached to a V-groove copper base and mounted on a TO-3P leadframe. The various thermal paths from the GaN gate junction to the case are carried out for heat dissipation by spreading to protective coating; transferring through the bond wires; spreading in the lateral device structure through the adhesive layer, and vertical heat spreading of silicon chip bottom. Thermal characterization showed a thermal resistance of 13.72 °C/W from the device to the TO-3P package. Experimental tests of a 30 mm gate-periphery single chip packaged in a 5 × 3 mm V-groove Cu base with a 100 V drain bias showed power dissipation of 22 W.
Keywords :
Thermal management , Infrared (IR) thermography , GaN HEMTs , Power Electronics
Journal title :
Applied Thermal Engineering
Journal title :
Applied Thermal Engineering
Serial Year :
Link To Document :