Record number :
1816988
Title of article :
The effects of Si incorporation on the thermal and tribological properties of DLC films deposited by PBII&D with bipolar pulses
Author/Authors :
Choi، نويسنده , , J. and Nakao، نويسنده , , S. and Miyagawa، نويسنده , , S. and Ikeyama، نويسنده , , M. and Miyagawa، نويسنده , , Y.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
5
From page :
8357
To page :
8361
Abstract :
In the present study, the thermal stability and tribological properties of silicon-incorporated diamond-like carbon (DLC) films were investigated. The DLC films were deposited using a bipolar-type plasma based ion implantation and deposition (PBII&D) technique, and the Si contents in the films were varied from 0 to 29 at.%. The deposited DLC films were annealed at 500 °C for 30 min in ambient air. ructure and mechanical properties of the Si-DLC films with a high Si content (≥ 21 at.%) were not affected by the thermal annealing. The 21 at.% Si-DLC film annealed at 500 °C shows low wear as well as low friction, whereas the 29 at.% Si-DLC film exhibited a high friction due to the creation of cracks on the worn surface related to the SiC-like nature. The 11 at.% Si-DLC film annealed at 500 °C shows the lowest friction coefficient at the cost of significant wear in the graphitized film. The formation of a thick silicon oxide layer on the Si-DLC film could be favorable for low friction and wear.
Keywords :
Silicon incorporation , thermal stability , d , Bipolar-type PBII& , Friction , Diamond-like carbon film
Journal title :
Surface and Coatings Technology
Journal title :
Surface and Coatings Technology
Serial Year :
2007
Link To Document :
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