Record number :
1799862
Title of article :
Effects of process parameters on the growth of thick SiO2 using plasma enhanced chemical vapor deposition with hexamethyldisilazane
Author/Authors :
Choi، نويسنده , , Jinkyung and Kim، نويسنده , , D.H. and Lee، نويسنده , , J. and Yoo، نويسنده , , Ji-Beom، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
5
From page :
136
To page :
140
Abstract :
The effects of various deposition parameters such as growth temperature, N2O/HMDS ratio, O2/HMDS ratio, RF power and deposition pressure on the growth characteristics and properties of thick SiO2 film using PECVD are investigated. It is found that a high growth temperature results in a low growth rate and dense films with few visible defects. Excess oxygen flow decreases the growth rate. The growth rate of SiO2 with O2 is lower than that of SiO2 with N2O. As the RF power increases, the growth rate increases and the refractive index approaches that of thermal oxide. As the deposition pressure increases, the growth rate increases first and decreases later. The thickness, etch rate, optical properties and surface roughness of SiO2 were measured using α-step, 6:1 BOE solution, ellipsometry and scanning electron microscope (SEM), respectively.
Keywords :
sio2 , Growth parameters , Optical properties of SiO2 , growth characteristics , Hexamethyldisilzane , Plasma enhanced chemical vapor deposition
Journal title :
Surface and Coatings Technology
Journal title :
Surface and Coatings Technology
Serial Year :
2000
Link To Document :
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