Record number :
Title of article :
Fabrication and characterization of GaN/amorphous Ga2O3 nanocables through thermal oxidation
Author/Authors :
Choi، نويسنده , , Ji-Hyuk and Ham، نويسنده , , Moon-Ho and Lee، نويسنده , , Woong and Myoung، نويسنده , , Jae-Min، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
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Abstract :
In an effort to obtain one-dimensional core/shell nanostructures, thermal oxidation behavior of GaN nanowires in O2 with N2 ambients was investigated by x-ray diffraction, transmission electron microscopy, and x-ray photoelectron spectroscopy. Crystallinity and chemical bonding states of the oxidized surface in the GaN nanowires were strongly dependent on the oxidation temperature. Chemical oxidation reaction occurred upon increasing the temperature, accompanied by the formation of an amorphous Ga2O3 layer at the GaN nanowire surface at 900 ∘C. The XPS analyses provided further evidence supporting the change in the chemical bonding states with increasing oxidation temperature.
Keywords :
A. Surface and interface , A. Nanostructures , B. Chemical synthesis , D. Phase transitions
Journal title :
Solid State Communications
Journal title :
Solid State Communications
Serial Year :
Link To Document :