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Title of article :
Synthesis and optical properties of In-doped GaN nanocrystals
Author/Authors :
Bhat، نويسنده , , S.V. and Biswas، نويسنده , , Kanishka and Rao، نويسنده , , C.N.R.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
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Abstract :
Indium-doped GaN nanocrystals with 5% and 10% In have been prepared by a low temperature solvothermal method using hexamethyldisilazane as the nitriding reagent. The nanocrystals show Raman bands at lower frequencies compared to GaN. Photoluminescence spectra of the In-doped GaN nanocrystals exhibit an increase in the FWHM with the decrease in the PL band energy, the band energy itself decreasing with increase in the In content.
Keywords :
A. Nanostructures , B. Chemical synthesis , D. Optical properties
Journal title :
Solid State Communications
Serial Year :
Link To Document :