Record number :
1789963
Title of article :
Influence of shunt conduction on determining the dominant recombination processes in CIGS thin-film solar cells
Author/Authors :
Cho، نويسنده , , Yunae and Lee، نويسنده , , Eunsongyi and Kim، نويسنده , , Dong-Wook and Ahn، نويسنده , , Sejin and Jeong، نويسنده , , Guk Yeong and Gwak، نويسنده , , Jihye and Yun، نويسنده , , Jae Ho and Kim، نويسنده , , Hogyoung Kim، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2013
Pages :
4
From page :
37
To page :
40
Abstract :
We investigated the transport and photovoltaic properties of Cu(In1-xGax)Se2 (CIGS) thin-film solar cells. The shunt-current-eliminated diode current could be obtained from the current–voltage characteristics by subtracting the parasitic shunt leakage current from the total current. The temperature dependence of the open-circuit voltage, extracted from the shunt-eliminated (total) current, suggested that the recombination activation energy is comparable to (much less than) the CIGS bandgap. The low-temperature characteristics of the diode ideality factor supported bulk-dominated recombination in the same cell. This suggests that shunt-current subtraction can provide the proper diode parameters of CIGS solar cells.
Keywords :
solar cells , open-circuit voltage , Recombination activation energy , CIGS thin film , Shunt current
Journal title :
Current Applied Physics
Journal title :
Current Applied Physics
Serial Year :
2013
Link To Document :
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