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Title of article :
Comparative studies on structural and optical properties of ZnO films grown on c-plane sapphire and GaAs (001) by MOCVD
Author/Authors :
Bang، نويسنده , , Kyu-Hyun and Hwang، نويسنده , , Deuk-Kyu and Jeong، نويسنده , , Min-Chang and Sohn، نويسنده , , Kee-Sun and Myoung، نويسنده , , Jae-Min، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
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Abstract :
ZnO thin films were grown on c-plane sapphire and GaAs (001) substrates by metalorganic chemical vapor deposition. Atomic force microscopy and double-crystal X-ray diffractometry were utilized to investigate the structural properties of the ZnO films. The optical properties of ZnO films were also investigated in terms of time integrated and resolved photoluminescence (TIPL and TRPL). Large hexagonal crystallites and better crystalline quality were observed from the ZnO film on sapphire. Also, both the TIPL and TRPL showed a significant difference as the substrate changed. In particular, a detected sharp contrast in the result of TRPL measurement is due to the different defect structure and the lattice strain and stress of ZnO films on different substrates.
Keywords :
A. GaAs , A. Sapphire , A. ZnO , D. MOCVD , D. TRPL , D. AFM
Journal title :
Solid State Communications
Serial Year :
Link To Document :