Record number :
Title of article :
I–V characteristics of a vertical single Ni nanowire by voltage-applied atomic force microscopy
Author/Authors :
Choi، نويسنده , , D.S. and Rheem، نويسنده , , Y. and Yoo، نويسنده , , B. and Myung، نويسنده , , N.V. and Kim، نويسنده , , Y.K.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2010
Pages :
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Abstract :
We report the measurement of the electrical resistivity of a vertical single Ni nanowire. A vertical array of Ni nanowires was fabricated on a Si substrate by electrodeposition using a nanoporous alumina template. The Ni nanowires possessed a face-centered-cubic polycrystalline structure. A voltage-applied atomic force microscope was used to make a nanometer-scale point contact on top of the vertical grown single Ni nanowire. The measured resistance was 1.1 MΩ for a nanowire with length of 3 μm and diameter of 20 nm.
Keywords :
Single Ni nanowire , Voltage-applied atomic force microscopy , Electrical resistance
Journal title :
Current Applied Physics
Journal title :
Current Applied Physics
Serial Year :
Link To Document :