Record number :
1786422
Title of article :
Preparation of CuInSe2/CuGaSe2 two layers absorber film by metal–organic chemical vapor deposition
Author/Authors :
Choi، نويسنده , , In-Hwan and Yu، نويسنده , , Peter Y.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2009
Pages :
4
From page :
151
To page :
154
Abstract :
Deposition of CuInSe2 thin film on CuGaSe2 thin film and vice versa has been studied by a low pressure metal–organic chemical vapor deposition technique with three precursors without additional Se. The properties of the resultant films have been examined by scanning electron microscopy, X-ray diffraction, and micro-Raman scattering. Good quality and well demarcated films are obtained only in the case of CuInSe2 grown on CuGaSe2. When CuGaSe2 was grown on top of CuInSe2 diffusion of Ga into CuInSe2 was found to produce an alloy film instead.
Keywords :
CUINSE2 , CuGaSe2 , MOCVD , Tandem solar cell
Journal title :
Current Applied Physics
Journal title :
Current Applied Physics
Serial Year :
2009
Link To Document :
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