Record number :
Title of article :
Novel finite-q plasmons in p-type GaAs/AlxGa1−xAs quantum wells
Author/Authors :
Cheng، نويسنده , , Shun-Jen and Gerhardts، نويسنده , , R.R.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
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Abstract :
We present a calculation of collective plasmon excitations in p-type GaAs/AlGaAs quantum wells, which is based on the random phase approximation and takes, within the 4×4 k·p model, band-structure effects exactly into account. We predict that the strong dependence of the subband wave functions on the in-plane wave vector, which does not exist in n-type quantum wells, leads to the existence of a novel, additional inter-subband plasmon at finite wave vectors and to a strong coupling of the intra- and the inter-subband plasmons, even in symmetric wells.
Keywords :
A. p-type quantum wells , A. GaAs , D. Collective excitation , D. Plasmon
Journal title :
Solid State Communications
Journal title :
Solid State Communications
Serial Year :
Link To Document :