Bae، نويسنده , , Seung-Yong and Seo، نويسنده , , Hee Won and Park، نويسنده , , Jeunghee and Yang، نويسنده , , Hyunik and Kim، نويسنده , , Bongsoo، نويسنده ,
Porous structured GaN nanowires were synthesized with a large scale by chemical vapor deposition of Ga/Ga2O3/B2O3/C mixture under NH3 flow. The average diameter is 40 nm and the length is up to 1 mm. The porous GaN nanowires consist of the wurtzite single crystal grown with the [0 1 1] direction parallel to the wire axis. The size of pores is 5–20 nm. The porous GaN crystals are partially coated with nearly amorphous BCN layers. The photoluminescence exhibits a broad band in the energy range of 2.1–3.6 eV.