Record number :
Title of article :
Defect-induced rigidity enhancement in layered semiconductors
Author/Authors :
Rلk، نويسنده , , Zs. and Mahanti، نويسنده , , S.D. and Mandal، نويسنده , , Krishna C. and Fernelius، نويسنده , , N.C.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
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Abstract :
We discuss the mechanism responsible for the observed improvement in the structural properties of In-doped GaSe, a layered material of great current interest. Formation energy calculations show that by tuning the Fermi energy, In can substitute for Ga or can go as an interstitial charged defect ( In i 3+ ) . We find that In i 3+ dramatically increases the shear stiffness of GaSe, explaining the observed enhancement in the rigidity of In-doped p-GaSe. The mechanism responsible for rigidity enhancement discussed here is quite general and applicable to a large class of layered solids with weak interlayer bonding.
Keywords :
B. Ab initio , D. Mechanical properties , A. Defects in semiconductors , D. Electronic structure
Journal title :
Solid State Communications
Link To Document :