Record number :
1764508
Title of article :
Fabrication and characterization of ZnO nanowire transistors with organic polymer as a dielectric layer
Author/Authors :
Choi، نويسنده , , Ji-Hyuk and Khang، نويسنده , , Dahl-Young and Myoung، نويسنده , , Jae-Min، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
5
From page :
126
To page :
130
Abstract :
Single-crystalline wurtzite ZnO nanowires were synthesized and used to fabricate field-effect transistors, using poly(4-vinyl phenol) polymer as a dielectric layer. The spin-coated, thin (120 nm) PVP layer exhibited quite a good dielectric behaviors, such as dielectric strength of ∼1.5 MV/cm (∼10−7 A/cm2), capacitance of 28.9 nF/cm2, and dielectric constant of ∼3.93. When compared to the bottom-gated ZnO nanowire devices with thermal SiO2 as a gate dielectric, the top-gated devices with the polymer dielectric showed much higher (∼5 times) mobility. This hybrid approach, i.e. inorganic single-crystalline semiconducting nanowires with organic polymer dielectrics, is shown to be promising for the nanowire-based devices to mechanically flexible applications.
Keywords :
A. ZnO NWs , A. Polymer dielectric , C. Nano-device , C. Hybrid structure
Journal title :
Solid State Communications
Journal title :
Solid State Communications
Serial Year :
2008
Link To Document :
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