Record number :
1698716
Title of article :
Structure of ordered and disordered InxGa1−xP(0 0 1) surfaces prepared by metalorganic vapor phase epitaxy
Author/Authors :
Cheng، نويسنده , , S.F. and Sun، نويسنده , , Simon Y. K. Law، نويسنده , , D.C and Visbeck، نويسنده , , S.B and Hicks، نويسنده , , R.F.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2006
Pages :
4
From page :
2924
To page :
2927
Abstract :
Ordered and disordered InGaP(0 0 1) films were grown by metalorganic vapor-phase epitaxy and studied by low energy electron diffraction, reflectance difference spectroscopy, and X-ray photoemission spectroscopy. Both alloy surfaces were covered with a monolayer of buckled phosphorus dimers, where half of the phosphorus atoms were terminated with hydrogen. Ordered InGaP(0 0 1) appeared indium rich, and exhibited a reflectance difference spectrum like that of InP(0 0 1). These results support a model whereby the strain energy on the ordered InGaP surface is reduced by aligning the group III atoms in alternating [1 1 0] rows, with the indium and gallium bonding to the buckled-down and buckled-up phosphorus atoms, respectively.
Keywords :
Order/disorder , chemical vapor deposition , Reflectance difference spectroscopy , Low energy electron diffraction
Journal title :
Surface Science
Journal title :
Surface Science
Serial Year :
2006
Link To Document :
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