Record number :
Title of article :
Thermal stability of the Co/β-Si3N4/Si(111) interface: A photoemission study
Author/Authors :
Flammini، نويسنده , , Roberto and Wiame، نويسنده , , Frédéric and Belkhou، نويسنده , , Rachid and Taleb-Ibrahimi، نويسنده , , Amina and Moras، نويسنده , , Paolo، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2012
Pages :
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Abstract :
The thermal stability of the Co/β-Si3N4/Si(111) interface has been studied by high-resolution photoemission spectroscopy in a temperature range extending from room temperature to 650 °C. It is demonstrated the ability of a very thin crystalline buffer layer of silicon nitride to prevent the interfacial reaction between cobalt and silicon at room temperature. The behaviour of the interface at higher temperature shows the formation of cobalt silicides already at 300 °C. Moreover, the presence of new components in the decomposition of the photoemission spectra is discussed in the light of the existing literature.
Keywords :
Temperature , Co 3p , Photoemission , Silicon , Nitride , Cobalt
Journal title :
Surface Science
Link To Document :