Title of article :
STM study of the early stages of the Cr/Si(1 1 1) interface formation
Utas، نويسنده , , O.A. and Utas، نويسنده , , T.V. and Kotlyar، نويسنده , , V.G. and Zotov، نويسنده , , A.V. and Saranin، نويسنده , , A.A. and Lifshits، نويسنده , , V.G.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2005
Using scanning tunneling microscopy (STM), the early stages of the Cr/Si(1 1 1) interface formation was studied. Two growth regimes, solid phase epitaxy and reactive deposition epitaxy, were employed. Deposited Cr amount was varied from 0.1 to 2.0 monolayers, growth temperature was ranging from room temperature to 750 °C. The effect of the growth conditions on the structure and morphology of the formed interface was established.
Atom–solid interactions , Silicon , Chromium , surface structure , Roughness , morphology , and topography , Scanning tunneling microscopy (STM)
Journal title :