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Title of article :
Atomistic simulations of shock waves in cubic silicon carbide
Author/Authors :
Cheng، نويسنده , , Q. and Wu، نويسنده , , Ha-Tao Wang، نويسنده , , Y. and Wang، نويسنده , , X.X.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Pages :
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Abstract :
Molecular dynamics simulations were performed to investigate the mechanical properties of shock waves in cubic silicon carbide (3C–SiC, β–SiC). Shock wave was produced and distinctly demonstrated when a moving sample material impacted to the static sample material on one side. At rather small impact velocity, compressive shock wave traveled with a velocity equal to the longitudinal sound speed. A linear Hugoniot relationship for normalized particle velocity was verified from our atomistic simulation results, which is comparable with the recent shock experiments on SiC powders. Part of cubic lattice atoms transforms into amorphous state when the impact velocity exceeds the critical value of 4.91 km/s. The size of the amorphous region is well proportional to the particle velocity.
Keywords :
Hugoniot relationship , silicon carbide , Molecular dynamics , Shock wave
Journal title :
Computational Materials Science
Journal title :
Computational Materials Science
Serial Year :
Link To Document :