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Title of article :
Optical anisotropy of oxidized InAs(0 0 1) surfaces
Author/Authors :
Arciprete، نويسنده , , F. and Goletti، نويسنده , , C. and Almaviva، نويسنده , , S. and Chiaradia، نويسنده , , P.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2002
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Abstract :
Reflectance anisotropy spectroscopy (RAS) has been applied to study the oxidation of decapped InAs(0 0 1) surfaces at room temperature. (2×4) and (4×2) surfaces were prepared in ultra high vacuum by annealing, and then exposed to increasing amounts of molecular oxygen. During exposure to gas, RAS spectral structures at 2.4 eV in (2×4) and at 1.7 eV in (4×2) are progressively reduced. After about 1×104 L, a broad residual anisotropy spectrum is still measured for (2×4), while relic anisotropy is nearly null for (4×2). Residual features are visible at bulk critical points (E1, E1+Δ1 and E0′). The different behavior versus gas contamination evidences the origin of RAS spectral structures, allowing interpretation in terms of surface-state or bulk transitions (the latter modified by the surface). By using Kramers–Kronig relations, the anisotropy of the imaginary part of the surface dielectric function (Δε″s) between [1̄ 1 0] and [1 1 0] directions of the substrate has been obtained from RAS data. We conclude that the main RAS structures (at 2.4 eV in (2×4), at 1.7 eV in (4×2)) are related to the surface reconstruction, although only the latter is a transition involving true surface states. We observe bulk contributions in coincidence with critical points (E1, E1+Δ1 and E0′).
Keywords :
Indium arsenide , Chemisorption , Surface relaxation and reconstruction , Oxidation
Journal title :
Surface Science
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