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Title of article :
A discontinuous Galerkin solver for Boltzmann–Poisson systems in nano devices
Author/Authors :
Cheng، نويسنده , , Yingda and Gamba، نويسنده , , Irene M. and Majorana، نويسنده , , Armando and Shu، نويسنده , , Chi-Wang، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
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Abstract :
In this paper, we present results of a discontinuous Galerkin (DG) scheme applied to deterministic computations of the transients for the Boltzmann–Poisson system describing electron transport in semiconductor devices. The collisional term models optical-phonon interactions which become dominant under strong energetic conditions corresponding to nano-scale active regions under applied bias. The proposed numerical technique is a finite element method using discontinuous piecewise polynomials as basis functions on unstructured meshes. It is applied to simulate hot electron transport in bulk silicon, in a silicon n + – n – n + diode and in a double gated 12 nm MOSFET. Additionally, the obtained results are compared to those of a high order WENO scheme simulation and DSMC (Discrete Simulation Monte Carlo) solvers.
Keywords :
Deterministic numerical methods , Boltzmann–Poisson systems , discontinuous Galerkin schemes , Statistical hot electron transport , Semiconductor nano-scale devices
Journal title :
Computer Methods in Applied Mechanics and Engineering
Journal title :
Computer Methods in Applied Mechanics and Engineering
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