Record number :
1477250
Title of article :
ILGAR technology IV:: ILGAR thin film technology extended to metal oxides
Author/Authors :
Bنr، نويسنده , , M. and Muffler، نويسنده , , H.-J. and Fischer، نويسنده , , Ch.-H. and Lux-Steiner، نويسنده , , M.C.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
8
From page :
113
To page :
120
Abstract :
An ion layer gas reaction (ILGAR) technique for the deposition of thin metal oxide films such as zinc oxide has been developed. In a cyclic process a solid precursor layer was applied on a substrate by dipping in a Zn(ClO4)2 solution and subsequent drying. Reaction with gaseous NH3/H2O led to a hydroxide layer which is thermally dehydrated to ZnO. The steps were repeated until the desired layer thickness was obtained. Under optimized conditions the chlorine remainder lay below 0.3 at%. X-ray-diffraction revealed a preferred orientation concerning the (0 0 2) plane. The band gap was determined to Egap=3.38 eV. First ZnO/CIGSSe solar cells showed efficiencies of 10.7%.
Keywords :
Thin film , Chemical deposition , Zinc oxide , Buffer layer
Journal title :
Solar Energy Materials and Solar Cells
Journal title :
Solar Energy Materials and Solar Cells
Serial Year :
2001
Link To Document :
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