Bhattacharya، نويسنده , , R.N and Batchelor، نويسنده , , W and Ramanathan، نويسنده , , K and Contreras، نويسنده , , M.A and Moriarty، نويسنده , , T، نويسنده ,
In this paper we report the 15.4%- and 13.4%-efficient CuIn1−xGaxSe2 (CIGS)-based devices from electrodeposited (ED) and electroless deposited (EL) precursors. The efficiency of the device prepared from electroless precursor film has been improved from 12.4% to 13.4%. The dependence of quantum efficiencies on reverse-bias voltage has been measured for a 15.4%-efficient ED device, 18.8%-efficient physical-vapor-deposited device, and 14.2%-efficient Cd-free device. The purpose of this work is to explore and improve the current collection mechanism.