Record number :
1380903
Title of article :
Nano-phase separation of arsenic tri-sulphide (As2S3) film and its effect on plasma etching
Author/Authors :
Choi، نويسنده , , D.-Y. and Madden، نويسنده , , S. and Wang، نويسنده , , R.P. and Rode، نويسنده , , A. and Krolikowska، نويسنده , , M. and Luther-Davies، نويسنده , , B.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
3
From page :
953
To page :
955
Abstract :
We present evidence of nano-scale phase separation in amorphous arsenic tri-sulphide films prepared by ultra-fast pulsed laser deposition based on Raman spectroscopy, X-ray photo-electron spectroscopy, and atomic force microscopy. We also show the results from plasma etching this material and conclude that the grainy structure of etched surfaces comes from the differential chemical etch rates of the different phases.
Keywords :
UPS/XPS , Laser deposition , Planar waveguides , chalcogenides , Raman spectroscopy
Journal title :
Journal of Non-Crystalline Solids
Journal title :
Journal of Non-Crystalline Solids
Serial Year :
2007
Link To Document :
بازگشت