Record number :
1334323
Title of article :
High-pressure crystal growth and magnetic and electrical properties of the quasi-one dimensional osmium oxide Na2OsO4
Author/Authors :
Y.G. Shi، نويسنده , , Y.F. Guo، نويسنده , , S. Yu، نويسنده , , M. Arai، نويسنده , , A.A. Belik، نويسنده , , A. Sato، نويسنده , , K. YAMAURA، نويسنده , , E. Takayama-Muromachi، نويسنده , , T. Varga، نويسنده , , J.F. Mitchell، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
6
From page :
402
To page :
407
Abstract :
Na2OsO4 crystals were grown by a NaCl flux method under high pressure. It crystallizes in the Ca2IrO4-type structure without having additional elements or metal vacancies, which are usually accommodated. It appears that Na2OsO4 is a metal-stoichiometric Ca2IrO4-type compound never been synthesized to date. Na2OsO4 has the octahedral environment of Os6+O6 so that the electronic configuration is 5d 2, suggesting the magnetic S =1 ground state. However, magnetization, electrical resistivity, and specific heat measurements indicated that the non-magnetic S =0 state is much likely for Na2OsO4 than the S =1 state. Band structure calculations and the structure analysis found that the disagreement is probably due to the statically uniaxial compression of the OsO6 octahedra, resulting in splitting of the t2g
Keywords :
Ca2IrO4 , High pressure synthesis , Osmium oxides
Journal title :
JOURNAL OF SOLID STATE CHEMISTRY
Serial Year :
2010
Link To Document :
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