Record number :
1333196
Title of article :
Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6
Author/Authors :
C.M.C. Vera، نويسنده , , R. Arag?n، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
5
From page :
1075
To page :
1079
Abstract :
The electrical conductivity of γ′-Bi2MoO6 was surveyed between 450 and 750 °C as a function of oxygen partial pressure, in the range 0.01–1 atm. A −image power law dependence, consistent with a Frenkel defect model of doubly ionized oxygen vacancies and interstitials, is evidence for an n-type semiconductive component, with an optical band gap of 2.9 eV. The absence of this dependence is used to map the onset of dominant ionic conduction.
Keywords :
Bismuth molybdates , Oxygen ionic conduction , Photoconductivity , Electrical transport
Journal title :
JOURNAL OF SOLID STATE CHEMISTRY
Serial Year :
2008
Link To Document :
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