Record number :
1330464
Title of article :
Preparation, structures, and band gaps of RbInS2 and RbInSe2
Author/Authors :
Fu Qiang Huang، نويسنده , , Bin Deng، نويسنده , , Donald E. Ellis، نويسنده , , James A. Ibers، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
5
From page :
2128
To page :
2132
Abstract :
The two compounds RbInS2 and RbInSe2 have been synthesized at 773 K by means of the reactive flux method. These isostructural compounds crystallize in space group C2/c of the monoclinic system with 16 formula units in a cell at 153 K of dimensions image, image, image, and image for RbInS2, and image, image, image, and image for RbInSe2. The In atoms are four-coordinated. The structure consists of two-dimensional image (image, Se) layers perpendicular to [001] separated from the Rb+ cations. Adamantane-like In4Q10 units are connected by common corners to form the layers. Band structure calculations indicate that these compounds are direct band-gap semiconductors with the smallest band gap at the image point. The calculated band gaps are 2.8 eV for RbInS2 and 2.0 eV for RbInSe2, values that are consistent with the colors of the compounds.
Keywords :
Synthesis , crystal structure , Band gaps , Chalcogenide , Indium
Journal title :
JOURNAL OF SOLID STATE CHEMISTRY
Journal title :
JOURNAL OF SOLID STATE CHEMISTRY
Serial Year :
2005
Link To Document :
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