Record number :
13142
Title of article :
Material property, compatibility, and reliability issues in diamond-enhanced, GaAs-based plastic packages
Author/Authors :
Fabis، Philip M. نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
-1274
From page :
1275
To page :
0
Abstract :
Mechanism of radiation effects in semiconductor (GaAs) is described. Analytic and numerical (equivalent circuit and quasi-hydrodynamic methods) models of ionizing irradiation influence on semiconductor devices are discussed. The GaAs microwave MESFET was selected as the investigation object. The combination of the quasihydrodynamic and equivalent circuits methods should provide a possibility to take into account all essential effects and at the same time to save the computation time in comparison with Monte Carlo method. © 1999 Published by Elsevier Science Ltd. All rights reserved.
Keywords :
Chemical , CVD diamond , Plastic packages , GaAs , Reliability , Thermal , Thermo-mechanical
Journal title :
MICROELECTRONICS RELIABILITY
Link To Document :