Record number :
1277527
Title of article :
Structural and ferroelectric properties of chemical solution deposited (Nd, Cu) co-doped BiFeO3 thin film
Author/Authors :
C.M. Raghavan، نويسنده , , J.W. Kim، نويسنده , , S.S. Kim ، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Pages :
6
From page :
3563
To page :
3568
Abstract :
Effects of (Nd, Cu) co-doping on the structural, electrical and ferroelectric properties of BiFeO3 polycrystalline thin film have been studied. Pure and co-doped thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Significant improvements in the electrical and the ferroelectric properties were observed for the co-doped thin film. The remnant polarization (2Pr) and the coercive field (2Ec) of the co-doped thin film were 106 μC/cm2 and 1032 kV/cm at an applied electric field of 1000 kV/cm, respectively. The improved properties of the co-doped thin film could be attributed to stabilized perovskite structures, reduced oxygen vacancies and modified microstructures.
Keywords :
A. Films , B. X-ray methods , A. Sol–gel processes , C. Ferroelectric properties
Journal title :
Ceramics International
Serial Year :
2013
Link To Document :
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