Record number :
115192
Title of article :
Atmospheric-Pressure Chemical Vapor Deposition of Group IVb Metal Phosphide Thin Films from Tetrakisdimethylamidometal Complexes and Cyclohexylphosphine
Author/Authors :
Carmalt، Claire J. نويسنده , , Molloy، Kieran C. نويسنده , , Parkin، Ivan P. نويسنده , , Blackman، Christopher S. نويسنده , , ONeill، Shane A. نويسنده , , Apostolico، Leonardo نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2004
Pages :
-111
From page :
112
To page :
0
Abstract :
The dual-source atmospheric-pressure chemical vapor deposition of group IVb metal phosphide films from tetrakisdimethylamido(metal) and cyclohexylphosphine precursors is presented. Deposition took place at low temperatures (<500 C), and nitrogen and carbon contamination of the films was negligible. The films had typical stoichiometric metal phosphide properties of high electrical conductivity, hardness, and chemical resistivity.
Journal title :
CHEMISTRY OF MATERIALS
Serial Year :
2004
Link To Document :
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