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Title of article :
Gallium Oxide Thin Films from the Atmospheric Pressure Chemical Vapor Deposition Reaction of Gallium Trichloride and Methanol
Author/Authors :
Carmalt، Claire J. نويسنده , , Parkin، Ivan P. نويسنده , , Binions، Russell نويسنده , , Pratt، Keith F. E. نويسنده , , Shaw، Graham A. نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2004
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Abstract :
The reaction of gallium trichloride and methanol under atmospheric pressure chemical vapor deposition conditions leads to the production of gallium oxide thin films on a variety of substrates. Scanning electron microscopy (SEM) indicated that an island growth mechanism predominated. X-ray photoelectron spectroscopy (XPS) revealed binding energy shifts of 530.6 eV for O 1s and 20.3 eV for Ga 3d. The films were X-ray amorphous. Energy-dispersive X-ray analysis (EDXA) and electron probe microanalysis (EPMA) gave coherent elemental compositions, indicating that a single phase Ga2O3 was made, with negligible impurity levels. The films showed little optical reflectance (~10%) and 65-75% total transmission from 400 to 800 nm. Gassensing experiments indicated that the films responded best to a reducing gas at 450 °C.
Keywords :
Scanning , image processing , image segmentation , wood , Defects
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