Record number :
1141127
Title of article :
Formation of Si-based nano-island array on porous anodic alumina Original Research Article
Author/Authors :
Y.F. Mei، نويسنده , , G.S. Huang، نويسنده , , Z.M. Li، نويسنده , , G.G. Siu، نويسنده , , Ricky K.Y. Fu، نويسنده , , Y.M. Yang، نويسنده , , X.L. Wu، نويسنده , , Z.K. Tang، نويسنده , , Paul K. Chu، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2004
Pages :
5
From page :
5633
To page :
5637
Abstract :
Si-based nano-island arrays were fabricated on porous anodic alumina by two methods. In the first method, a thick silicon film was first deposited onto the surface with highly ordered bowl array prepared by anodizing an Al foil, followed by the formation of a polycrystalline silicon nano-island array on the surface close to the bowl array after dissolving aluminum. In the second method, porous anodization was performed on an Al thin film on Si and a SiO2 nano-island array was subsequently formed electrochemically. Time-resolved atomic force microscopy and photoluminescence were used to investigate the growth process as well as the mechanism of the growth process. Our proposed mechanism as well as assumptions made to formulate the model were found to be in agreement with the experimental results.
Keywords :
Nanostructures , Chemical synthesis , Semiconductor
Journal title :
ACTA Materialia
Serial Year :
2004
Link To Document :
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